| PART |
Description |
Maker |
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| CLY29-10 CLY29 CLY29-00 CLY29-05 |
HiRel C-Band GaAs Power-MESFET
SMT CAP 10NF 50V 10% CERAMIC 0805
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| CFY27-P CFY27 CFY27-38 |
HiRel Ku-Band GaAs General Purpose MESFET
|
INFINEON[Infineon Technologies AG]
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ6472-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-78, 2 PIN
|
NEC, Corp.
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| CFY25-20E7916 |
HiRel X-Band GaAs Low Noise/General P...
|
Infineon
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
